| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve step coverage in a peripheral region before an upper electrode is formed, by forming the upper electrode after an insulation layer having the same thickness as the upper electrode is formed. CONSTITUTION: A semiconductor substrate(30) is prepared which includes a cell region and the peripheral region. An underlying layer(40) including wordlines(32) and bitlines(34) is formed on the semiconductor substrate. An insulation layer(42) is formed on the underlying layer. Only the insulation layer on the cell region is eliminated to expose the underlying layer on the cell region and to leave the insulation layer only on the peripheral region. The upper electrode(50) is formed on the exposed underlying layer. A dielectric layer(52) is formed on the sidewall of the upper electrode. A lower electrode(55) is formed on the resultant structure.
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