MOS transistor production with gate length less than that imposed by photolithography comprises forming internal spacers in cavity arranged in pile before deposition of gate material

摘要

The production of a MOS transistor comprises: (a) the formation, on a semiconductor substrate having a first type of conductivity, of a pile formed of a first semiconducting layer (1) having a second type of conductivity and a second insulating layer (2); (b) the definition by photolithography of a window engraved on the upper surface of the second insulating layer; (c) an engraving of the pile in the window to produce a cavity (3); (d) the formation in the cavity of an insulating region (4) supported on the sides of the cavity and having a transverse opening emerging on the upper surface of the substrate; (e) the formation on the upper surface of the substrate across the transverse opening of an oxide gate layer (6); (f) the deposition on the pile and in the transverse opening of a gate material layer (7); and (g) an engraving of the gate material layer and the pile, from one side to the other and at a distance from the edges of the insulating region, to form a block (BL) on the upper surface of the substrate. Independent claims are also included for the following: (a) a MOS transistor produced by the above process; and (b) an integrated circuit incorporating at least one MOS transistor of this type.