| 摘要 |
PURPOSE: An apparatus for generating plasma of a process for etching a semiconductor wafer is provided to arbitrarily use a physical characteristic of plasma, by varying the area of an electrode without replacing the electrode. CONSTITUTION: Reaction gas is injected to a chamber(102) in which a predetermined plasma etch process is performed on a wafer. Upper electrodes(104,104a,104b,104n) and a lower electrode(105) are supplied with power of a predetermined potential to generate the plasma(103), fixed in the chamber. A main power unit(106) supplies power of a predetermined potential to the upper and lower electrodes. The upper electrode is divided into a plurality of regions having a predetermined radius from the center axis of the chamber. An insulating material(109,112) is interposed between the plurality of divided regions. The power of the predetermined potential is separately supplied from the main power unit to the plurality of divided regions. A plurality of the first switching devices(110a,110b,111a,111b) are formed in one-to-one correspondence to the plurality of divided regions to switch the power of the predetermined potential supplied from the main power unit to the plurality of divided regions.
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