MANUFACTURING METHOD OF GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride-based compound semiconductor light emitting device that makes a gallium nitride-based compound semiconductor layer doped with p-type impurities a low-resistance p-type. SOLUTION: The gallium nitride-based compound semiconductor light emitting device allows the n-type gallium nitride-based compound semiconductor layer and gallium nitride-based compound semiconductor layer containing the p-type impurities to grow on a substrate by the vapor growth method. The entirely grown n-type gallium nitride-based compound semiconductor layer and a p-type gallium nitride-based compound semiconductor layer and annealed, and the gallium nitride-based compound semiconductor layer that contains the p-type impurities is set to the p-type gallium nitride-based compound semiconductor layer.