发明名称 |
METHOD AND MEMBER FOR BURYING OPENING OF HIGH- PERFORMANCE ELECTRONIC SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for burying at least one opening of a semiconductor substrate. SOLUTION: At least one opening of the semiconductor substrate is buried by providing a sacrifice carrier structure on a substrate surface. The sacrifice carrier structure comprises a first layer, a filler material on the first layer, and a mask on the filler material comprising at least one opening. The opening at least partially conforms to the opening of substrate. The filler material is pushed into the opening under heat and pressure, to remove the sacrifice carrier structure. |
申请公布号 |
JP2002305367(A) |
申请公布日期 |
2002.10.18 |
申请号 |
JP20020002614 |
申请日期 |
2002.01.09 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
DONALD S FAAKUHAA;CONSTANTINOS I PAPATHOMAS |
分类号 |
H05K3/28;H01L21/48;H01L23/32;H01L23/498;H05K3/00;H05K3/40;H05K3/42;H05K3/46;(IPC1-7):H05K3/28 |
主分类号 |
H05K3/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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