SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a self-aligned semiconductor laser element in which COMD is difficult to occur and high light output oscillation is performed and whose long reliability is high. SOLUTION: In the self-aligned semiconductor element, a low refractive index layer 8 operating as a current narrowing layer is formed near an active layer 5. The low refractive index layer 8 is formed of a plurality of compound semiconductor layers 81 , 82 ... 8i constituted of Alx Ga1-x As (0<=x<=1). In the semiconductor laser element, the compound semiconductor layers have lower refractive indexes as they are detached further from an active layer 5. To put it concretely, the low refractive index layer 8 is constituted of a plurality of AlGaAs layers and the AlGaAs layers detached further from the active layer have higher Al composition rates.