| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growing apparatus which can manufacture GaN-based compound semiconductor single crystal having a small number of crystal defects. SOLUTION: The crystal growing apparatus is equipped, with at least a crystal growing container which can be sealed and has heat resistance, a substrate holder which is arranged in the crystal growing container, a 1st intake pipe which introduces raw material gas into the crystal growing container, a temperature control means which is extended to nearby the substrate holder and introduces NH3 gas into near substrate holder in the crystal-growing container, and a temperature control means which controls crystal growth temperature. With the structure explained above, the device completes the vapor-phase growth of GaN-based compound semiconductor crystal on a substrate held by the substrate holder through the reaction between a Ga raw material gas and NH3 gas. The substance forming at least the nozzle part of the 2nd intake pipe, positioned at a part which is exposed to a produced GaN-based compound, e.g. near substrate has a coefficient of thermal expansion 1/5 to 5 times as large as that of GaN and a >=1,300 deg.C fusion point, or preferably, has a coefficient of thermal expansion 1/3 to 3 times as large as that of GaN and a >=1,500 deg.C fusion point.
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