| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing device which can manufacture a semiconductor device having small curvature. SOLUTION: Through epitaxial growth, a 1st semiconductor multilayered film 130 is formed on the top surface of a substrate 101 for crystal growth, and a 2nd semiconductor multilayered film 150 is formed on the reverse surface of the substrate 130.
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