| 摘要 |
PURPOSE: A capacitor formation method of semiconductor devices is provided to effectively prevent an out-diffusion of H2 by entirely filling a gap between storage nodes and by forming an upper electrode using electroplating. CONSTITUTION: After sequentially forming an oxide layer(1) and a nitride layer(2) on a substrate, a storage node contact hole is formed by selectively etching the nitride and oxide layers. A polysilicon plug(3) is formed in the contact hole. A storage node(9) is formed to connect with the polysilicon plug(3). A ferroelectric film(10) is formed on the entire surface of the resultant structure. A seed layer(11) for electroplating is formed on the ferroelectric film(10). An upper electrode(12) is formed on the seed layer(11) by using electroplating. Also, a diffusion barrier layer(13) of H2 is formed on the upper electrode(12) by ALD(Atomic Layer Deposition).
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