METHOD FOR MANUFACTURING THIN FILM TRANSISTOR FOR FLAT PANEL DISPLAY

摘要

PURPOSE: A method for manufacturing a thin film transistor for a flat panel display is provided to prevent hillock and a pin hole from being generated in a gate and prevent crack from being generated in an insulating film formed on the gate. CONSTITUTION: A method for manufacturing a thin film transistor for a flat panel display includes the steps of forming semiconductor layers(432,632) on a board(710) having a predetermined area; forming a first insulating film(740) on the semiconductor layers; forming a first gate(755) made of aluminum alloy system on the first insulating film and thereafter forming a second gate(765) made of molybdenum alloy system on the first gate to form a gate; forming a second insulating film on the gate; forming a contact hole on the second insulating film to disclose the semiconductor layers, forming patterned source and drain electrodes on the second insulating film to fill the contact hole.