SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which the parasitic capacitance in the circumference of a gate electrode can be reduced, and to provide a method of manufacturing the device. SOLUTION: This semiconductor device is provided with the gate electrode 3 formed on a silicon semiconductor substrate 1 through a gate oxide film 2 and a pair of impurity diffusion layers 4 formed on both sides of the electrode 3 in the surface area of the substrate 1. A silicon nitride film 7 is formed to cover the side wall of the gate electrode 3 as a side wall spacer and the cross section of the film 7 in the vicinity of the gate electrode 3 is formed in an L-shape stretched to the surface of the substrate 1.