| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a new integrated circuit inductance structure which can overcome the problems which are known in inductance structure. SOLUTION: This integrated circuit inductance structure includes a silicon substrate, a planar winding of a conductive track, a resistive layer which is not etched under the winding, an insulation layer between the winding and the resistive layer, and discontinuous conductive sections, individually parallel to a portion of the winding, which is the closest and electrically connected to ground and to the resistive layer.</p> |
