| 摘要 |
<p>PROBLEM TO BE SOLVED: To supply appropriate internal power source voltage so that performance of a semiconductor memory can be brought out to the utmost limit even when process variation is caused. SOLUTION: This circuit has voltage dividing circuit consisting of one field effect transistor incorporated in a semiconductor chip of a semiconductor device and a plurality of resistors, power source voltage externally supplied is divided into two kinds of voltage by this voltage dividing circuit depending on conduction or non-conduction of the field effect transistor, this divided voltage is supplied to a plurality of field effect transistors incorporated in the semiconductor chip as internal power source voltage.</p> |
