SURFACE TYPE LIGHT-LIGHT SWITCH AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a surface type light-light switch which can actualize an extremely fast response by improving an absorption recovery time and its manufacturing method. SOLUTION: This switch has a semiconductor multi-quantum well(MQW) structure thin film and a low-reflection film and a high-reflection film which are arranged across the semiconductor multi-quantum well structure thin film; and signal light is made incident from the low-reflection film side and reflected by the high-reflection film to exit from the low-reflection film side and the signal light is turned on and off by turning on and off control light. The MQW structure thin film is formed by sequentially growing on a GaAs substrate 10 an Al0.3 Ga0.7 As etching-stop layer 11, a (CaAs-AlAs) MQW (100 cycles) layer 12, and an Al0.3 Ga0.7 As cap layer 13 at 560 deg.C as normally used growth temperature by using an MBE method (molecular beam epitaxy), and the elements are so constituted that the wavelengths of the control light and signal light correspond or nearly correspond to not the base quantum potential (n=1), but the high quantum potential (n>=2) of the MQW structure thin film.