发明名称 ACTIVE MATRIX SUBSTRATE AND MANUFACTURING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide an active matrix substrate which is formed by using a resin substrate and wherein the thermal degradation of the resin substrate can be prevented. SOLUTION: The active matrix substrate 10 consists of the resin substrate 1, a silicon dioxide film 2 as an insulation film formed on the resin substrate 1, a diode element 11 formed on the silicon dioxide film 2, a chromium film 7 as a metal wiring film formed in contact with the diode element 11 at the both ends of the diode element 11, an interlayer insulation film 8 formed to cover the chromium film 7, the diode element 11 and the silicon dioxide film 2 and an indium tin oxide(ITO) film 9 as a pixel electrode filling a contact hole 8a formed in the interlayer insulation film 8 so as to reach the chromium film 7 and formed on the interlayer insulation film 8.</p>
申请公布号 JP2002303879(A) 申请公布日期 2002.10.18
申请号 JP20010104570 申请日期 2001.04.03
申请人 NEC CORP 发明人 OKUMURA NOBU;SUKEGAWA OSAMU
分类号 G02F1/1333;G02F1/1365;G09F9/00;G09F9/30;G09F9/35;H01L21/329;H01L29/786;H01L29/861;(IPC1-7):G02F1/136;G02F1/133 主分类号 G02F1/1333
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