Verfahren zum gesteuerten Zuechten von kristallinen Schichten ternaerer Verbindungen aus Elementen der II. und VI. Spalte des Periodischen Systems der Elemente und Vorrichtung zur Durchfuehrung des Verfahrens

摘要

1282167 Semi-conductors INTERNATIONAL BUSINESS MACHINES CORP 2 Sept 1969 [27 Sept 1968] 43364/69 Heading H1K [Also in Division C7] A semi-conductor ternary film of elements of Groups II and VI is deposited on a crystal 16 by feeding vapours from sources 42, 43, 44 at a temperature which prevents binary growth. The substrate temperature is controlled by a heat sink 32. The substrate may be cleaned by backetching, and may be Hg-Te, Pb-Te, Sn-Te or Cd-Te. The film deposited may be Hg-Cd-Te, Zn-Cd-Te, Zn-Hg-Te, Hg-Cd-Se, Zn-Hg-Se, and Zn-Cd-Se.