| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of sufficiently assuring etching resistance as a mask material and accurately working a member to be worked. SOLUTION: The method for manufacturing the semiconductor device comprises a step of forming the mask material 105, having an aromatic ring and containing a content of a carbon atom of 80 wt.% or more on a member 104 to be worked, a step of forming a mask material pattern 105 by etching the material 105 in a desired pattern, and a step of etching the member 104 with the mask material pattern 105 as a mask. |
