| 摘要 |
<p>PROBLEM TO BE SOLVED: To remove a work-deteriorated layer, generated when the rear surface of a semiconductor wafer is ground, without damaging the semiconductor wafer. SOLUTION: In this method, first a rear surface 22B of the semiconductor wafer 22 is ground by a straight cup type grinding wheel 24, while keeping the semiconductor wafer 22 on a suction table 12. Then, after the completion of the grinding work, the rear surface 22B of the semiconductor wafer 22 is polished with a polishing cloth 42 with the semiconductor wafer 22 held on the suction table 12. In this method, the polishing is executed with the semiconductor wafer 22 held on the common suction table 12, the affected layer can be removed without damaging the semiconductor wafer 22.</p> |
