METHOD AND APPARATUS FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To stably manufacture a polycrystalline semiconductor thin film with high crystallinity. SOLUTION: Laser heat treatment is carried out, by irradiating a semiconductor film with a pulse laser light of 370 to 710 nm wavelength. At this time, the region on the semiconductor film irradiated with the pulse laser light is irradiated with an inspection light, and variation in the intensity of the reflected light of the inspection light caused by the irradiation with the pulse laser light is detected. It is confirmed from the intensity variation of the reflected light whether or not a specific crystallization state of the semiconductor film is obtained. When it is confirmed that the specific crystallization state has been obtained, the position of the semiconductor film is moved relative to the pulse laser light irradiation position.