| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer, which restrains generation of SOI islands generated in its exfoliation and which reduces the density of LPD defects existing on the surface of the SOI wafer in the SOI wafer, which is manufactured by an ion implantation and exfoliation method, and to provide a method of manufacturing the SOI wafer so as to reduce device defects. SOLUTION: The SOI wafer is manufactured by the ion implantation and exfoliation method. In the SOI wafer, the width of an SOI island region in a terrace part, which is generated in the edge part of the SOI wafer and in which a base wafer is exposed is narrower than 1 mm, and the density of pit- shaped defects which are detected by an LPD inspection, which exist on the surface of an SOI layer and whose size is 0.19μm or more, is 1 count/cm<2> or smaller. The method is used for manufacturing the SOI wafer.
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