| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique where the number of processes for manufacturing a photoelectric conversion element, a transistor and a light-emitting element on the same insulating surface is reduced, and as a result, production costs are reduced, a yield is enhanced, and reliability and productivity are enhanced. SOLUTION: In the method of manufacturing the semiconductor device, which manufactures the photoelectric conversion element, the transistor and the light- emitting element, the source region and the drain region of the transistor are connected respectively to a source interconnection and a drain interconnection, one from among the source interconnection and the drain interconnection and one from among an n-type semiconductor layer and a p-type semiconductor layer, which are provided at the photoelectric conversion element are connected by a connecting interconnection. The connecting interconnection and a pixel electrode, which is provided at the light emitting element, are formed of the same material.
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