发明名称 Semiconductor device having capacitor which assures sufficient capacity without requiring large space and method of producing the same
摘要 In a semiconductor device comprising first and second layer wirings formed with a space left therebetween and a capacitor formed in the space and electrically connected to the first and the second layer wirings, the capacitor comprises a via electrically connected to one of the first and the second layer wirings, an electrode made of a conductive material and electrically connected to the one of the first and the second layer wirings through the via, and a dielectric film formed between the electrode and the other of the first and the second layer wirings.
申请公布号 US2002149083(A1) 申请公布日期 2002.10.17
申请号 US20020172121 申请日期 2002.06.14
申请人 KAWATA MASATO;KIKUTA KUNIKO 发明人 KAWATA MASATO;KIKUTA KUNIKO
分类号 H01L21/3205;H01L21/02;H01L21/768;H01L21/822;H01L23/52;H01L23/522;H01L27/04;(IPC1-7):H01L29/00 主分类号 H01L21/3205
代理机构 代理人
主权项
地址