Multilevel interconnect structure with low-k dielectric and method of fabricating the structure

摘要

A multilevel interconnect structure with a low-k dielectric constant is fabricated in an integrated circuit structure by the steps of depositing a layer of photoresist on a substrate assembly, etching the photoresist to form openings, forming a metal layer on the photoresist layer to fill the openings and then removing the photoresist layer by, for example, ashing. The metal layer is supported by the metal which filled the openings formed in the photoresist.