SEMICONDUCTOR DEVICE

摘要

A semiconductor device capable of increasing a di/dt tolerance dose and a dV/dt tolerance dose without increasing an on-resistance, wherein the pad lower base area (5) of the upper principal plane of a semiconductor substrate (1) in the area just below a gate pad (12) is not connected to a source electrode (11), nor connected to a main base area (4) connected to the source electrode (11), namely, the pad lower base area (5) is kept in a floated state.