| 摘要 |
A power semiconductor device, particularly a power semiconductor device having a plurality of power semiconductor elements built therein, wherein the device is designed to reduce a difference in impedance due to a difference in wiring length, to facilitate electric connection between the main circuit terminal and the outside, and to be less subject to limitation in the mounted number and layout of power semiconductor elements. And, the device comprises a rectangular annular wiring substrate (10) disposed above a bottom substrate (12), the wiring substrate (10) being so disposed as to cover the end edge of the bottom substrate (12) from above, the central portion of the bottom substrate (12) being formed with an opening, wherein a main collector electrode (4) and a main emitter electrode (5) pass through the opening and project outside through an opening in a resin case (11) to be ready for electric connection with the outside. Further, a control emitter pad (71) and a gate pad (81) are electrically connected to a control emitter electrode and a gate electrode through electric wires (WR) of equal length. |
