SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

A semiconductor integrated circuit device in which the quality of a capacitor insulating ferroelectric film of an FeRAM does not degraded and the characteristics of the FeRAM is improved. A PZT film containing Pb of a content more than that of a capacitor insulating film (11a) (PZT film) constituting a capacitor (C) of the FeRAM memory cell is deposited on the capacitor (C) and subjected to an anisotropic etching so as to form a side wall film (SW) on the side wall of the capacitor (C). As a result, for example, the adverse influence of the hydrogen and H2O in a TEOS film on the capacitor (C) can be weakened, and the degradation of the characteristics of the capacitor insulating film (11a) can be suppressed.