Light-receiving device

摘要

The invention relates to a back-illuminated type light-receiving device. The light-receiving device can be used for a wide frequency range. The device has a structure in which a p-type semiconductor layer and an n-type semiconductor layer are successively stacked on the front side of the semiconductor substrate. A light-receiving portion is provided on the back side of the substrate. A dopant diffusion suppressing layer may be provided between the substrate and the p-type layer.