| 发明名称 |
Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung einer Ionenstrahlanlage zur Durchführung des Verfahrens |
| 摘要 |
The invention relates to a lithographic method for removing a thin masking layer, particularly a Si3N4 layer on a side of a recess in a semi-conductor arrangement. According to the invention, an ion beam is orientated in an inclined manner at a certain angle towards the recess, enabling the thin masking layer to be removed in the regions exposed to the beams.
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| 申请公布号 |
DE10115912(A1) |
申请公布日期 |
2002.10.17 |
| 申请号 |
DE20011015912 |
申请日期 |
2001.03.30 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GOEBEL, BERND;MOL, PETER;SEIDL, HARALD;GUTSCHE, MARTIN |
| 分类号 |
H01L21/033;H01L21/311;H01L21/8242;(IPC1-7):H01L21/311;H01L21/824;H01L21/027;H01L21/32;H01L21/321;B81C1/00 |
主分类号 |
H01L21/033 |
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