| 摘要 |
The purpose of the present invention is to provide a process and an apparatus for efficiently treating a gas containing fluorine-containing compounds and CO to be discharged, for example, from the step of dry cleaning the inner surfaces and the like of a semiconductor manufacturing apparatus or the step of etching various types of formed films such as oxide films in the semiconductor industry. In order to accomplish the above-mentioned purpose, the gas treating process according to the present invention is a process for treating a gas containing fluorine-containing compounds and CO which comprises contacting the above described gas with O2 and H2O at a temperature of 850° C. or higher to oxidize the CO to CO2; and then contacting the gas with gamma-alumina at a temperature of 600 to 900° C. to decompose the fluorine-containing compounds.
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