发明名称 Semiconductor device including insulating substrate formed of single-crystal silicon chip
摘要 A semiconductor device includes an insulating substrate for electrical insulation formed of a single-crystal silicon chip as a base, an electrode pattern formed on the insulating substrate to allow electric current to pass therethrough, and a plurality of semiconductor elements selectively mounted on the electrode pattern. The plurality of semiconductor elements and the electrode pattern are selectively electrically connected to each other.
申请公布号 US2002149055(A1) 申请公布日期 2002.10.17
申请号 US20010971615 申请日期 2001.10.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TOMOMATSU YOSHIFUMI
分类号 H01L25/00;H01L21/84;H01L25/07;H01L25/18;H01L27/12;(IPC1-7):H01L27/01 主分类号 H01L25/00
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