发明名称 |
Semiconductor device including insulating substrate formed of single-crystal silicon chip |
摘要 |
A semiconductor device includes an insulating substrate for electrical insulation formed of a single-crystal silicon chip as a base, an electrode pattern formed on the insulating substrate to allow electric current to pass therethrough, and a plurality of semiconductor elements selectively mounted on the electrode pattern. The plurality of semiconductor elements and the electrode pattern are selectively electrically connected to each other.
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申请公布号 |
US2002149055(A1) |
申请公布日期 |
2002.10.17 |
申请号 |
US20010971615 |
申请日期 |
2001.10.09 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOMOMATSU YOSHIFUMI |
分类号 |
H01L25/00;H01L21/84;H01L25/07;H01L25/18;H01L27/12;(IPC1-7):H01L27/01 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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