| 摘要 |
A semiconductor laser device increased in energy density at the focus; and a semiconductor laser excitation solid laser device using the same. A row of dotted-line-wise series-connected laser beams are disposed in front of stack array laser elements emitting a group of two-dimensional array-like parallel laser beams, each row of laser beams refracted substantially normal to the direction of the dotted lines and collimated are received, the direction of the laser beams from emitters or a group of emitters is turned through a rig ht angle and the laser beams are emitted, whereby the laser beams are converted into a plurality of rows of laser beams paralleled substantially in a ladder form, which rows of laser beams are beam-compressed into a row of laser beam s, the latter being converted into a series disposition, a row of parallel compressed laser beams are turned through a right angle and emitted, whereby all laser beams are converted into a group of laser beams paralleled in a single row, the group of laser beams being collimated and converged to a foc us.
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