| 发明名称 |
Method of producing a capacitor electrode with a barrier structure |
| 摘要 |
A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure.
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| 申请公布号 |
US2002151162(A1) |
申请公布日期 |
2002.10.17 |
| 申请号 |
US20020127618 |
申请日期 |
2002.04.22 |
| 申请人 |
BEITEL GERHARD;SANGER ANNETTE;KASKO IGOR |
发明人 |
BEITEL GERHARD;SANGER ANNETTE;KASKO IGOR |
| 分类号 |
H01L21/28;H01L21/02;H01L21/285;H01L21/3105;H01L21/321;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
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