METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE

摘要

There are disclosed a method for manufacturing an n-type ZnTe compound semiconductor single crystal having a high carrier density and a low resistance, a ZnTe compound semiconductor single crystal, and a semiconductor device manufactured by using the ZnTe compound semiconductor as a substrate. Specifically, the method is characterized in that a ZnTe compound semiconductor single crystal is doped simultaneously with a first dopant for controlling the conductivity type of the ZnTe compound semiconductor to a first conductivity type and a second dopant for controlling the conductivity type to a second conduction type different from the first one in such a way that the number of atoms of the second dopant is less than that of the first dopant. It is possible to achieve a desired carrier density in a less amount dopant than that of the prior art and to improve the crystallinity of the crystal obtained.