| 摘要 |
<p>A radio frequency (RF) device (10) comprises a substrate (20), a conducting ground plane (30) formed thereon, a layered stack (33-39) formed on the conducting ground plane (30) wherein the stack (33-39) is composed of a plurality of conducting layers (34, 36, 38) and a plurality of dielectric layers (33, 35, 37, 39) arranged alternately, and a conduting RF pad (11) wherein, in a periphl region of the device (10), the conducting ground plane (30) and conducting layers (34, 36, 38) are interconnected by conducting vias (40) thereby to form an enclosed, central region, and wherein the conducting RF pad (11) is located with the central region and formed on at least one of the dielectric layers (37). An advantage of the device is that it does not suffer from deleterious effects such as stray or parasitic capacitance.</p> |
