SEMICONDUCTOR NON-VOLATILE STORAGE DEVICE

摘要

A semiconductor non-volatile storage device which lets a memory cell directly drive up to a local bit line, wherein the output of the local bit line is received by a gate electrode of a separately-provided signal amplifying transistor, and the signal amplifying transistor is used to drive a global bit line having a large load capacity. Since an amplifying transistor having a drive power higher than a memory cell drives the parasitic capacity of a global bit line, information stored in a memory cell can be read at high speed. Therefore, the storage device is used for storing program codes for controlling microcomputers or the like to thereby enhance a system performance.