发明名称 Wafer heat-treatment system and wafer heat-treatment method
摘要 A wafer heat-treatment system for processing a wafer by a high-temperature heat-treatment process and cooling the heat-treated wafer, comprises walls surrounding a closed space placing the wafer and having a hollow sealing a gas therein, and a pressure-regulating unit connecting to the hollow for regulating pressure in the hollow. Hence, the wafer heat-treatment system reduces power consumption by heating lamps by carrying out an evacuating process before the high-temperature heat-treatment process, and shortens the time necessary for the cool down process by a pressurizing process that is carried out after the completion of the high-temperature heat-treatment process.
申请公布号 US2002148135(A1) 申请公布日期 2002.10.17
申请号 US20020066783 申请日期 2002.02.06
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. 发明人 KAWASE YOSHIMASA
分类号 H01L21/31;H01L21/00;H01L21/26;H01L21/324;(IPC1-7):F26B21/06 主分类号 H01L21/31
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