SELF-ALIGNED CONTACT DOPING FOR ORGANIC FIELD EFFECT TRANSISTORS

摘要

The invention relates to a method for doping electroconductive organic compounds, to a method for producing organic field effect transistors and to an organic field effect transistor with a simplified structure. The inventive method is characterized in that a doping substance that can be activated by irradiating it with an activation radiation is introduced into an electroconductive organic compound and the electroconductive compound is irradiated with the activation radiation. The activation radiation triggers a chemical reaction which irreversibly fixates the doping substance in the electroconductive organic compound. A specific arrangement of the individual elements of a transistor allows production of a transistor structure that can be produced at substantially lower costs than organic field effect transistors known so far. According to the specific arrangement, a source contact (4), a drain contact (5) and a gate electrode (2) are arranged one beside the other on a substrate (1). The gate electrode (2) is insulated with a gate dielectric (3). The arrangement is chosen in such a way that between the gate dielectric (3) and the source or drain contact (4, 5) a gap (11a, 11b) is formed in which the organic semiconductor (6) is applied directly to the substrate (1). Doped areas (8, 9) are produced by back irradiation in which areas the organic semiconductor (6) has an increased electroconductivity while in the channel region (7) that is influenced by the field of the gate electrode (2) the electroconductivity of the organic semiconductor (6) remains low.