PROCESSING METHOD AND PROCESSOR

摘要

When process gas is supplied into a chamber (30) at a specified flow rate and a wafer W is processed in the chamber (30), flow rate of process gas is self-diagnosed by a self-diagnosis circuit in a flow rate controller (11) every time when the wafer W is processed with the process gas utilizing the time for replac a processed wafer W with a wafer W to be processed effectively. Since the flow rate controller (11) can be self-diagnosed on a wafer basis without interrupting the processing operation of the wafer W, throughput of processing operation is not lowered.