SEMI-CONDUCTOR LASER FITTED WITH A MIRROR

摘要

The invention relates to an intersubband-type laser semi-conductor comprising a substrate (10) made from semiconductor material and a stack of layers which are also made from semi-conductor materials, said stack being disposed on the substrate and forming an active cavity (12) in which the laser radiation is generated. The cavity is provided with two flat, parallel faces (12a), through which the radiation is emitted with a wavelength that is defined by the characteristics of said stack, and at least one of said faces is covered with a mirror (18). The aforementioned cavity (12) bears an electrically-conductive layer (14) which, together with the substrate (10), forms two electrodes, between which an electric voltage is applied which generates a current that induces the laser radiation. According to the invention, the mirror (18) comprises a stratum of transparent material for the wavelength considered, having a refraction index that is noticeably higher than that of the materials forming said cavity, e.g. lead salt.