| 摘要 |
A nitride semiconductor device having high electrode contact properties is disclosed. The nitride semiconductor device includes a semiconductor layer made of a group III nitride semiconductor, and a metal electrode for supplying the semiconductor layer with a carrier. The device has a first contact layer made of a group III nitride semiconductor (AlxGa1-x)1-yInyN (0<=x<=1, 0<y<=1), laminated between the semiconductor layer and the metal electrode, and a group II element added thereto, and a second contact layer made of a group III nitride semiconductor Alx'Ga1-x'N (0<=x'<=1) and laminated between the first contact and the metal electrode.
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