发明名称 Photomask set for photolithographic operation
摘要 A photomask set and a photolithographic operation suitable for forming a desired pattern on a photoresist layer. The photomask set includes a plurality of photomasks each having a different pattern thereon. To form an overall pattern on the photoresist layer, each photomask is used in turn in a multi-exposure operation.
申请公布号 US2002150841(A1) 申请公布日期 2002.10.17
申请号 US20010833124 申请日期 2001.04.11
申请人 WANG LI-MING;TSAI KAO-TSAIR 发明人 WANG LI-MING;TSAI KAO-TSAIR
分类号 G03F1/00;G03F1/14;G03F7/20;(IPC1-7):G03F9/00;G03C5/00 主分类号 G03F1/00
代理机构 代理人
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