发明名称 |
Photomask set for photolithographic operation |
摘要 |
A photomask set and a photolithographic operation suitable for forming a desired pattern on a photoresist layer. The photomask set includes a plurality of photomasks each having a different pattern thereon. To form an overall pattern on the photoresist layer, each photomask is used in turn in a multi-exposure operation.
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申请公布号 |
US2002150841(A1) |
申请公布日期 |
2002.10.17 |
申请号 |
US20010833124 |
申请日期 |
2001.04.11 |
申请人 |
WANG LI-MING;TSAI KAO-TSAIR |
发明人 |
WANG LI-MING;TSAI KAO-TSAIR |
分类号 |
G03F1/00;G03F1/14;G03F7/20;(IPC1-7):G03F9/00;G03C5/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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