发明名称 |
Method of manufacturing a field-effect transistor substantially consisting of organic materials |
摘要 |
A practical method of manufacturing an organic field-effect transistor is disclosed. By applying the insulating layer having a thickness of 0.3 mum or less to a substantially planar electrode layer, an organic field-effect transistor can be made having a channel length down to 2 mum, satisfying the condition for voltage amplification at voltages well below 10 V, and having an on/off ratio of about 25.
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申请公布号 |
US2002151117(A1) |
申请公布日期 |
2002.10.17 |
申请号 |
US20020163104 |
申请日期 |
2002.06.05 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS |
发明人 |
MUTSAERS CORNELIUS M.J.;DE LEEUW DAGOBERT M.;DRURY CHRISTOPHER J. |
分类号 |
H01L51/05;H01L29/786;H01L51/00;H01L51/10;H01L51/30;H01L51/40;(IPC1-7):H01L51/40;H01L21/84;H01L21/00 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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