| 摘要 |
<p>A method for manufacturing a semiconductor device, which comprises forming a zirconium silicate layer (103) on a silicon substrate (100) and simultaneously a zirconium oxide layer (102) on the zirconium silicate layer (103) and then removing the zirconium oxide layer (102) to thereby form a gate insulating film (104) consisting essentially of the zirconium silicate layer (103).</p> |
