发明名称 |
Semiconductor device and process for its manufacture to increase threshold voltage stability |
摘要 |
The oxide atop a P pad below the gate electrode has a cut completely through the oxide atop the P pad to prevent the drift of contamination ions, such as sodium ions from the periphery of a MOSgated device to the periphery of the active area, thus stabilizing the device threshold voltage under high temperature reverse bias. The cut may be filled with metal.
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申请公布号 |
US2002149079(A1) |
申请公布日期 |
2002.10.17 |
申请号 |
US20020120287 |
申请日期 |
2002.04.10 |
申请人 |
INTERNATIONAL RECTIFIER CORP. |
发明人 |
SPRING KYLE |
分类号 |
H01L23/485;H01L29/78;(IPC1-7):H01L23/58 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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