发明名称 Half bridge circuit has series circuit of two MOS transistors, each with body zone between source and drain zones that is floating or that is connected via Ohmic resistance to source zone
摘要 The half bridge circuit has a series circuit of two MOS transistors (T1,T2, each with a source zone, a drain zone, a body zone between the source zone and the drain zone and a control electrode. The body zone is floating or is connected via an Ohmic resistance to the source zone. The first and second transistors are mutually complementary. AN Independent claim is also included for the following: a circuit with two half bridge circuits.
申请公布号 DE10117360(A1) 申请公布日期 2002.10.17
申请号 DE20011017360 申请日期 2001.04.06
申请人 INFINEON TECHNOLOGIES AG 发明人 TIHANYI, JENOE
分类号 H01L27/088;H02M7/00;(IPC1-7):H01L27/085;H02M7/12 主分类号 H01L27/088
代理机构 代理人
主权项
地址