Arrangement for cooling a power semiconductor device

摘要

The cooling device comprises an aluminum carrier (1) to which an insulating layer (2) made of ceramic material is applied. The power semiconductor device (3) is arranged on the insulating layer. The insulating layer may be applied using a plasma-chemical technique. The power semiconductor device may be arranged on a conductive layer (5) on the insulating layer. The conductive layer may be made from a thick-film paste that melts at low temperatures, or from conductive adhesive. Film resistors made of polymer paste may be arranged on the insulating layer.