发明名称 |
Insulating film for semiconductor device and semiconductor device |
摘要 |
To provide an insulating film having a low dielectric constant and performance sufficient as an interlayer insulating film of a semiconductor device, and a semiconductor device using the insulating film. An insulating film for a semiconductor device used as an interlayer insulating film of a semiconductor device, the insulating film consisting essentially of poly- alpha , alpha -difluoroparaxylylene and having a relative dielectric constant of from 2.1 to 2.7. An insulating film for a semiconductor device used as an interlayer insulating film of a semiconductor device, the insulating film consisting essentially of poly- alpha , alpha -difluoroparaxylylene and exhibiting a step coverage of from 0.4 to 0.9. An insulating film for a semiconductor device capable of being filled in a gap, the insulating film consisting essentially of poly- alpha , alpha -difluoroparaxylylene, having a ratio (D/L) of a depth (D) and an opening width (L) of 1 or more. |
申请公布号 |
EP0966039(A3) |
申请公布日期 |
2002.10.16 |
申请号 |
EP19990300284 |
申请日期 |
1999.01.15 |
申请人 |
KISHIMOTO SANGYO CO., LTD.;DAISANKASEI CO.,LTD. |
发明人 |
KIMOTO, HISAO;MOCHIZUKI, TSUTOMU |
分类号 |
C08G61/12;H01B3/30;H01L21/31;H01L21/312;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
C08G61/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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