发明名称 |
Semiconductor laser with mirror |
摘要 |
<p>The sub band laser semiconductor structure has a substrate (10) with stacked layer forming an active cavity (12) with two plane parallel faces (12a). An electrical conducting layer (14) forms electrodes with the laser substrate. There is a mirror layer (18) with a strata of transparent material at the wavelength considered which has a refraction index higher than the material forming the cavity.</p> |
申请公布号 |
EP1249905(A1) |
申请公布日期 |
2002.10.16 |
申请号 |
EP20010810353 |
申请日期 |
2001.04.10 |
申请人 |
ALPES LASERS SA |
发明人 |
FAIST, JEROME;HOFSTETTER, DANIEL;AELLEN, THIERRY |
分类号 |
H01S5/028;H01S5/12;H01S5/34;(IPC1-7):H01S5/34 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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