Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers

摘要

A light-emitting device (10) has a gallium arsenide substrate (12), a light-emitting structure (20) above the substrate and capable of emitting light of wavelength 1.3-1.55 microns, and a buffer layer (12b) between the substrate and structure. The layer composition varies such that its lattice constant grades from that approximately equal to substrate lattice constant to that approximately equal to structure lattice constant. An independent claim is included for the production of a light-emitting device.