| 发明名称 |
Shallow trench isolation (STI) by accounting for the occupation density of raised sections of the insulating film over the dummy patterns |
| 摘要 |
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| 申请公布号 |
GB2374460(A) |
申请公布日期 |
2002.10.16 |
| 申请号 |
GB20010030923 |
申请日期 |
2001.12.24 |
| 申请人 |
* NEC CORPORATION |
发明人 |
NORIYUKI * OTA;NOBUYUKI * KATSUKI |
| 分类号 |
H01L21/76;H01L21/762;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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